Allwin21 has been providing unique technical support, high quality semiconductor equipments and fast supplied spare parts worldwide.

Allwin21 Corp provide the following equipment: 

Allwin21 Corp. can also provide  Allwin21 Corp proprietary AW Control Software and Superior Temperature Control Technology  to upgrade the refurbished equipment which provides the following significant advantages

• Integrated process control system
• Real time graphics display
• Real time process data acquisition, display, and analysis
• Programmed comprehensive calibration and diagnostic functions
• Better performance and maintenance than the original systems

 Allwin21 is the exclusive licenced manufacture for AG Heatpulse 610.  Allwin21 is manufacturing the AccuThermo AW-410,AccuThermo AW-610,AccuThermo AW 810,originally the AG Heatpulse 610.The AccuThermo AW-410,AccuThermo AW-610,AccuThermo AW 810 have innovative software and more advanced temperature control technologies.  

   AccuThermo AW-410             AccuThermo AW-610                                      AccuThermo AW 810

Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).

AG Associates Heatpulse is one of the most famous RTP equipment manufacturers. Many Integrated Chip companies, R&D centers, Institutes all over the world have been using AG Heatpulse Systems. 

Allwin21 Corp can provide the following refurbished RTP equipment

• AG Heatpulse 210
• AG Heatpulse 410
• AG Heatpulse 610
• AG Heatpulse 2100  

In semiconductor manufacturing plasma asher/stripper is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ashing which is removed with a vacuum pump.

Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas (O2) to ionizing radiation. At the same time, many free radicals are formed which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.

Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. Effectively, this means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active specie is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.

Allwin21 Corp can provide the following refurbished plasma asher/descum equipment.

• Refurbished Matrix 105
• Refurbished Matrix 205 
• Refurbished Matrix 10
• Refurbished Gasonics Aura 1000
• Refurbished Gasonics Aura 2000
• Refurbished Gasonics Aura 3010
• Refurbished Gasonics L3510
• Refurbished Branson IPC 3000
• Refurbished Branson IPC L3200

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

Allwin21 Corp can provide the following refurbished Etcher equipment.

• Refurbished Matrix303
• Refurbished  Matrix403
• Refurbished  Gasonics AE2001
• Refurbished  Gasonics PEP3510

TM:
Gasonics  is a Registered Trademark of Novellus Corp.
Matrix is a Registered Trademark of Matrix Integrated Systems, Inc.
Heatpulse  is a Registered Trademark of AG Associates.
Branson is a Registered Trademark of  Novellus Corp.