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Products

4  Rapid Thermal Process
 
·LEDs Production RTA RTP-AW810
·Refurbished AG Heatpulse 210
·Refurbished AG Heatpulse 410
·Refurbished AG Heatpulse 610
·Refurbished AG Heatpulse 21XX
·New AccuThermo AW 810M
·New AccuThermo AW 610
·New AccuThermo AW 410
4  Plasma Asher Stripper Descum
 
·Refurbished Matrix 205
·Refurbished Gasonics Aura 3010
·Refurbished Branson IPC 3000
·Refurbished Matrix 10
·Refurbished Gasonics L3510
·Refurbished GaSonics Aura 2000LL Loadlock Asher
·Branson IPC L3200-Long time Plasma Asher Process
·Refurbished Gasonics Aura 1000
·Refurbished Matrix 105
4  Plasma Etch
 
·Lam Autoetcher 590
·Lam AutoEtch Lam 490
·Refurbished Tegal 901e
·Refurbished Matrix 303
·Refurbished Matrix 403
·Refurbished Gasonics AE 2001
·Lam Rainbow 4520 Oxide Etch
·Lam Rainbow 4428 for Plasma Etch
·Lam Rainbow 4420 Plasma Etch
4  Reactive ion etching (RIE)
 
·Plasma Therm VII 70 Series
·Refurbished STS 320 RIE
4  PECVD
 
·Refurbished STS 310 PECVD
4  Inductively coupled plasma (ICP)
 
·Refurbished STS 320 ICP
4  Metrology & Inspection
 
·Hitachi S8840 Scanning Electron Microscope
·XFlash® QUAD 5040 Detector
·XFlash® 5030 Detector
·XFlash® 5010 Detector
·Energy Dispersive X- Ray Spectrometer QUANTAX 200
·LEO FE-SEM model 982
·Micrion FIB model M9500
·Hitachi FE-SEM model S-4160
·Hitachi FE-SEM model S-4700
·Hitachi S-4500 SEM Cold Field Emission SEM System
·Hitachi S-8820 CD SEM
·Hitachi S-9300 CD SEM_SDI
·Hitachi S-4800 SEM Cold Field Emission SEM System
4  Misc.
4  Backside Equipment
4  Lab Equipment
 
·Muffle Furnaces (400-1800C)
·Tube Furnaces (1-5 Zone)
·Hi-Pressure Furnace
·RTP Furnaces
·Dental Sintering Furnaces
·Induction heaters&CZ grower
·Lab Ovens / Hot Plates
·Melting Furnaces
·Cutting / Dicing Saws
·Polishing Machines
·Desktop Machine-shop
·Glove Box
·Film Coaters
·Lab Press & Rollers
·Laboratory Mill / Mixer
·Battery / Capacitor Analyzers
·Desk-Top X-Ray Instruments
·Digital Microscopes
·DI Water / Ultrasonics
·UV Equipment & Adhesives
·Lab Ware / Accessory
·Round Wafer Carriers
·Sticky & Film Boxes
·IC Tray & Plastic Boxes
·Vacuum Pen&Tweezers
4  Electrical Test and PCM Software
 
·Electronic Tester List
·Temptronic TP03500
·HP 4142B
·Refurbished HP 4145B
·Refurbished HP 4062UX
·Refurbished HP 4155
4  Sputtering and Evaporator System
 
·Upgrade MRC903A Sputter System
4  Lithography & Photoresist
 
·IOS.Cube 6 | Series
·IOS.Cube 5 | Series
·IOS.Cube 3 | Series
·IOS.Cube 2 | Series
·IOS.Cube 1 | Series
4  Wet Processing
 
·SV-702 Spin Rinse & Dryer (SRD) system
·SV-802 Spin Rinse & Dryer (SRD) system
·ASD-SH-802 Horizontal Spin Dry-In
4  Wafer Probers
 
·Refurbished EG 4085X
·Refurbished EG 1034
·Refurbished EG 2001
·Refurbished MP 2020
·Refurbished EG 2010
4  Chiller
4  Pump
4  RF Power
4  Oven
4  Gas Cabint
4  Inventory on Sale
4  Gallium Nitride Material
 
·free-standing GaN substrate
·GaN Templates
4  Bulk Equipment on sale
 

Plasma Etch

Plasma Etch

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

 Allwin21 Corp can provide the following refurbished Etcher equipment.

·Lam Autoetcher 590

·Lam AutoEtch Lam 490

·Lam Rainbow 4420 Plasma Etch

·Lam Rainbow 4428 for Plasma Etch

·Lam Rainbow 4520 Oxide Etch

·Refurbished Tegal 901e

·Refurbished Tegal 903e

·Refurbished Matrix 303

·Refurbished Matrix 403

·Refurbished Gasonics AE 2001

                                   

 Refurbished  Gasonics AE2001           Refurbished Matrix303   

 Allwin21 Corp. can also provide  Allwin21 Corp proprietary AW Control Software and Superior Temperature Control Technology  to upgrade the refurbished equipment which provides the following significant advantages

  • Integrated process control system
  • Real time graphics display
  • Real time process data acquisition, display, and analysis
  • Programmed comprehensive calibration and diagnostic functions
  • Better performance and maintenance than the original systems

 TM:
Gasonics  is a Registered Trademark of Novellus Corp.

Matrix is a Registered Trademark of Matrix Integrated Systems, Inc.
Heatpulse  is a Registered Trademark of AG Associates.
Branson is a Registered Trademark of  Novellus Corp.

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Allwin21 Corp. Phone:001-408-988-5188 Fax:001-408-9047168 3251 Leonard Court Santa Clara,CA 95054 e-mail:sales@allwin21.com
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