AllWin21 Corp.

DESCRIPTION

The L 3510 photoresist Asher combines the control capability of a single wafer processing with the throughput of a batch system. Versatile downstream plasma Ashing technology and low particulate generation handling/processing features ensures high yield results.

FEATURES

· Small footprint for optimized lab. space utilization

· Through the wall or ballroom type system installation

· Wide process window due to its patented large diameter microwave power delivery system

· Process flexibility due to:

Microprocessor controlled process parameter

Platen and lamp heating

· SECS II or GEM interface to communicate Host computer

· Reliable EOP detection system for preventing under/over etch

· SW self diagnostic for fault codes for troubleshooting aid

· Has dual cassette load capability

· SMIF option, AGV and robotic cassette loading

· Convenient service access from rear for easier serviceability

· 12 month warranty inclusive of end of life components in the system

APPLICATION

· Bulk resist removal

· High dose implant resist (As+,B+,P+)

· Descum

· Non-oxidizing metal processing

· Post Polysilicon etch

· Post Metal etch

· Post Oxide etch

· Rework

· Post development descum (pre-etch)

· Dry/wet process cap

· Resist planarization

SPECIFICATIONS

· 3” to 8” (75 to 200mm) wafer capability

· Throughput : 45 to 60 WPH

· Process pressure range: .5 to > 5 Torr

· Platen temperature range: 10 to 300 degree C

· Microwave generator power: 0 to 1.2Kw (2.45 Ghz)

· 3 MFC gas capability plus purge

FACILITIES

· Electrical: 200 to 240 VAC, 3 phase, 40A, 50/60 hz., 5 wire conductor (min. # 10 ga. wire, 3 hot, neutral and ground)

· Process vacuum pump requirement: 165 cfm (min), KF 40 input port

· Robot end effector vacuum requirement: > 20”of Hg, 1.2 cfm free air

· Microwave generator: PCW at >1.5 GPM, 3/8” tube, max pressure 70 psig, temp. 95 deg F/35

deg C at >6500 BTU

· Process Cooling Water: 10 to 35 deg C at > 1.6 GPM, screened (filtered), low mineral content,

7 pH (neutral), 40 to 70 psig

· Relative Humidity:

System area: 35 to 45%

Support equip. area: 30 to 80%

· Temp. at system area: min 50 deg F (10 deg C), max 90 deg F (32 deg C)

Temp. at support equip. area: min 45 deg F (7 deg C), max 110 deg F (43 deg C)

· Cabinet exhaust requirement: >250 cfm, 4” OD tube

· CDA:(for pneumatic device control) N2 or CDA @ 80 to 90 psig, ¼” swagelok

· Gas: O2 (10 to 20 psig delivery), 99.998% purity, ¼” female VCR fitting

N2 or N2O (10 to 20 psig delivery), 99.998% purity, ¼” female VCR fitting

Forming gas (optional): N2 plus 4% H2 (UHP), 99.998% purity, (10 to 20 psig), ¼” female

VCR fitting

N2 purge (UHP): 99.998% purity, (35 to 40% psig), ¼” Swagelok fitting

Gas consumption: 11 to 15 liters per wafer

WEIGHT/DIMENSIONS/SPACE/FOOTPRINT

· Dimension: 30” (76.2 cm) W X 43” (109.2cm) D X 60” (152.4 cm) H

· Footprint: 30” (76.2 cm) W X 43” (109.2 cm) D

· Space: 15” (38.1 cm) front and rear clearance for plumbing and

serviceability

24” (61 cm) headroom clearance for serviceability

15” (38.1 cm) side clearance for serviceability

· Approximate system weight: 350 lbs. inclusive of microwave generator (weight: 85 lbs)