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|Refurbished by:Allwin21 Corp.
|Production proven, highly reliable and cost effective workhorse for low temperature cassette to cassette in line single wafer plasma etch system used in etching a variety of films on Silicon, GaAs, InP and other dielectric material substrates.
||Fully refurbished to OEM spec.
Customization capability to meet customer requirements
Can accommodate 75mm to 150mm wafers
Non-friction type spatula pick and place wafer transport
Superior, versatile and repeatable process results
Low cost ownership and high throughput
12 month warranty
Able to support end of the life components in the system
Silicon ICs (photoresist Descum, Nitride etch, Polymide and BCB etch, Reaction Ion etch, Zero Layer etch, Backside etch, Isotropic Oxide etch, Non-critical Polysilicon etch, Titanium/Tantalum Alloy etch)
Thin Film Magnetic Heads
Flat Panel Display
|Control system: Microprocessor controlled (PC) or customized
Process pressure range: 100mT to 4Torr
Process Temperature range: 25 to 35 deg. Centigrade
RF power range: up to 1KW (13.56 Mhz.)
Gas 1: N2 MFC
Gas 2: CHF3 MFC
Gas 3: SF6 MFC
Gas 4: He MFC
Clean metering needle valve (O2)
UPC (process dependent on customer requirement)
Typical operating temperature for lower electrode: 1 to 5 deg. C above ambient temp. to prevent moisture condensation (typical 25 deg. C).
Typical operating temperature of upper electrode= 1 to 5 deg. C above lower electrode temperature.
|Electrical: 200-240 VAC selectable frequency (50/60 hz.), 30A, 3 wire, single phase and 2 pole. Requires high in rush circuit breaker (not supplied).
CDA: CDA/N2 for pneumatics 85 +/- 5 psig, filtered and dry., ¼” standard brass compression type fitting (Swagelok)
Reactor Vent/Purge and Ballast: 10 – 30 psig filtered and dry
Cooling Water: Single channel circulating chiller, distilled water only, cap. 2.8 gal., outlet pressure:@ 40 psig , 45 psig max., temp range: 0 to 80 deg. C, Flow rate: at 40 psig= o.4 +/- .05GPM (1.5 +/- .2 LPM), connecting hose must withstand coolant at 40 psig at 80 deg. C. Use ¼” tubing.
Gasses: Gas 1: 10 +/-5 psig
Gas 2: Max 10 psig
Gas 3: Max 10 psig
Gas 4: 10 +/- 5psig
Clean needle valve (O2)= 10 +/- 5 psig
Exhaust: Cabinet exhaust: 100 CFM (2.832 LPM) min. OD= 4.0”
Vacuum pump exhaust: 26.8 CFM (760 LPM), 1.5” OD, NW 40 fitting
Process vacuum: Pump rating= 28.3 CFM (802 LPM), Pump Speed= 21 CFM (594.3 LPM) min, Vacuum connection= 1.5” (3.81cm) OD, NW40, Vacuum hose= 1.5” terminated with NW40 fitting.
|Height: 26” (66.04cm) cabinet (closed)
44” (111.8cm) cabinet (opened)
Width: 44” (111.8cm)
Depth: 42” (106.7cm). Allow 15” (38.1cm) for servicing and plumbing.
Footprint: 20.5” (52.07cm) W X 30” (76.2cm) D
Weight: 500 lbs. (227.27 kg.)
** weight of water chiller and RF generator units excluded from computation.