|    Inquiry Sales Contact: Phone: 001-408-988-5188 E-mail: sales@allwin21.com
 
Products

 Rapid Thermal Process
 
·AccuThermo AW 410
·AccuThermo AW 610
·AccuThermo AW 810
·AccuThermo AW 820
·AccuThermo AW 830
·AccuThermo AW 610V
·AccuThermo AW 820V
·AccuThermo AW 860V
·Heatpulse 210/410/610
 Plasma Asher Descum
 
·Matrix 105R
·Matrix 105/205/106
·Branson IPC L3200
·Branson IPC 2000/3000/4000
·Gasonics L3510
·Gasonics Aura 1000
·Gasonics Aura 3010
·Gasonics Aura 2000LL
 Plasma Etch/RIE/ICP
 
·Lam Rainbow 4520/4528
·Matrix 303
·Lam AutoEtch 790
·Lam AutoEtch 690
·Lam AutoEtch 590
·Lam AutoEtch 490
·Gasonics AE 2001
·Lam Rainbow 4620/4628
·Lam Rainbow 4420/4428
·Tegal 903e TTW
·Tegal 901e TTW
·Tegal 903e
·Tegal 901e
·Lam Rainbow 4720/4728
·Surface Tech Sys Multiplex ICP
·STS Multiplex ASE AOE ICP CLUSTER TOOL
 Sputtering Deposition System
 
·AccuSputter AW 4450
·Perkin Elmer 4450
·Perkin Elmer 4410 Sputter
·Perkin Elmer 2400
 Metrology and Tester and Others
 
·Tencor M-Gage 300
·Hitachi CD-SEM 8840
·Hitachi CD-SEM 8820
·Hitachi FE-SEM 4700
·Hitachi FE-SEM 4500
·HP 4062UX
·HP 4145A/B
·EG 2001 Probe
·EG 1034 Probe
·AW PCM System
 

Gasonics AE 2001

Condition:Used (Refurbished and warranty is available). Contact Us for more information.

Wafer Size Capacity:3 to 6 inch

Gasonics is a Registered Trademark of Novellus Corp.Gasonics AE 2001 is a single wafer downstream isotropic etch system, designed to etch thin films such as poly silicon, silicon nitride and CVD oxides.Utilizing the proven Aura downstream microwave source and a dedicated reactor chamber, GaSonicsAE2001 offers high etch rates and no RF damage to the wafer. Featuring high reliability and flexibility in process parameter, GaSonics AE 2001 is the unparalleled tool of choice for multiple applications and high capital productivity. Gaonicsa AE2001 is an electro-mechanical production system used to etch materials such as nitride, oxide poly-silicon etc. from the surface of silicon or other substrate. Each wafer is processed individually by means a chemical reaction induced by a gas plasma.
  1. Single Wafer, Multi-Step Processing
  2. Closed-Loop Temperature Control
  3. Pressure Control
  4. Accurate, closed-loop pressure control with ¡°butterfly-style¡± throttle valve and capacitance manometer
  5. RF power: 100 to 500 watts
  6. Timed cycles up to 4 hour each
  7. No RF damage (¡ê0.1 volt CV shift)
  8. High throughput
  9. Front and backside etching
  10. Excellent etch rates and uniformities
  11. 100mm ¨C 150mm wafer capability
  12. Variable platen temperature
  13. Alumina (ceramic) plasma tube
  14. Fluorine compatible chamber
  15. Well-characterized process
  16. Multiple step process capability
  17. High capital productivity.
 

Equipment By Categoty : Rapid Thermal Process | Plasma Asher Descum | Plasma Etch/RIE/ICP | Sputtering Deposition System | Metrology and Tester

Equipment By Manufacturers : Allwin21 Corp. | Perkin Elmer | Matrix | Tegal | Lam Research | Gasonics | Branson | STS | ELECTROGLAS | Hitachi | KLA-Tencor | HP

Sales Contact: Phone: 001-408-988-5188 Fax: 001-408-904-7168 Address: 3521 Leonard Court Santa Clara,CA 95054 E-mail: sales@allwin21.com Copyright © 2006-2016 Allwin21,Corp. All Rights Reserved