Manufacturer: LAM Research
Model: Rainbow 4520
- 4"/100mm
- Envision software
- Through-the-wall
- Orbital Gas Box
- RF cart with PDW 2200 AE RF generator
- Dual Verity EP200Mmd Endpoint detection.
- Remote operator interface, circuit breaker style onboard AC dist.
- Dual channel LAM chiller included : LAM 2080 TCU
- 208V 3 phase 30A power.
Software version :need system power boot up .
Pedestal type : clamp type.
Gas MFC configuration : N2 100 SCCM UFC-1200A
He 1 SLM UFC-1660
CHF3 50 SCCM UFC-1200A
CF4 100 SCCM UFC-1200A
Ar 1 SLM UFC-1200A
O2 20 SCCM UFC-1200A
10 gas lines and 6 gas used.
RF Gen type : PDW2200 Advanced Energy.
Vacuum pump: Load lock =====Ebara pump
Main chamber ==Edward Pump IQDP 80 Blower QMB 250
Chiller type : Lam Research 2080 TCU
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Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Allwin21 Corp can provide the following refurbished Etcher equipment.
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