Manufacturer: LAM Research
Model: Lam 490
Serial: 1903
Condition:Used,Working,complete,just Disassembly from a Fab.
Price: Contact by sales@allwin21.com
Price term:AS IS or refurbished.
*Fully automated microprocessor control
*High throughput vacuum load locked
*Programmable, variable electrode spacing
*Endpoint detection
*Can be configured for 3" to 6" wafers
*Bulk head mount configuration
*ENI OEM 6 13.56 MHz
*650W RF Generator. 208 V, 3 Phase, 60 Hz
| Fluorine & Chlorine based parallel plate system for etching polysilicon & nitride with endpoint detection |
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- Gases available: Cl2, SF6, He, O2, C2F6
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- RF power source: 650W at 13.56MHz |
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- Substrate size: 4” single wafer
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Polysilicon etch with chlorine based gas
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E/R: 3500A/min Selectivity to oxide: 25:1 |
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Uniformity: 5% Selectivity to photoresist: 1.3:1 |
| Polysilicon etch with fluorine based gas |
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E/R: 4000A/min Selectivity to oxide: 20:1 |
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Uniformity: 8% Selectivity to photoresist: 1.5:1 |
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Silicon Nitride etch with fluorine based gas
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E/R: 1000A/min Selectivity to oxide: 3:1 |
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Uniformity: 8% Selectivity to photoresist: 1.3:1 |
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| Inquiry