Manufacture:Tel
Condition:Used,good condition,complete Vintage:1994
Price:$22,500.00,AS IS,WHERE IS,Advanced Payment.
It is not tested or refurbished.It is sold *AS-IS WHERE IS*.Allwin21 accepts no responsibility or liability for the use
and/or functionality of the system.
Amount:1 set
No:AW-00021-01
More information: sales@allwin21.com
 Front
 Side 1
 Back
 Side 2
  Cassette Station
  Controller
  Controller and Gas
  Power and Stick
WE DO NOT HAVE THE FOLLOWINGS:
1.TEL 600 series Vertical Diffusion Furnaces, 6" & 8", both Atmospheric & LPCVD, all processes available, will configure to your specifications.
2.TEL Alpha 303i furnaces, 12" SEMI STD-Notch
Carrier Maker/Type: FOUP/25slots
Carrier Storage: 16
Fork Type/Material: 1+4/Al2O3
Wafer Loading/Unloading seq: ED->P->M/M->P->ED
Qty of process wafers: 100
Boat Material: Quartz
Boat type: 119 slots (8mm pitch)
Pedestal type: quartz+SiC
Heater type: mid temp VMM-56-022
5 zone 500-1000C
26.7Pa process pressure
Shut-down, disassembled
2002 and 2004 vintage.
3. TEL Alpha 601 Diffusion furnace, 8".
4.TEL Alpha 801 diffusion furnaces, 8",
5.TEL Alpha 805 diffusion furnace
6.TEL Alpha 808 furnace. 8", 150 wafer loading capapcity, H2 Anneal (Sinter) & TEOS process, VMM-40-101 heter type
7.TEL Alpha 808 Vertical furnaces, 8"
Clean
2 ASYST integrated SMIF stations
150 wafer load size (150 + 20)
Medium Temperature Torch Oxidation process
TS4000Z controller
5 zone heater element
Gas system Tylan/Mykrolis MFC’s
MFC1 N2
MFC2 O2
MFC3 O2
MFC4 H2
Schumacher Absolute Trans LC bubbler
8.TEL Alpha 808S Vertical furnace, 8"
Furnace Cabinet (with Scavenger)
Heater Chamber (5-Zone DDC with Omron Zone Controllers)
Power Supply Unit
Primary Power System
Furnace Monitor
Auto Door
Boat Elevator w/ Boat Rotation Mechanism
Wafer Counter / Notch Finder
TB-0800-PVI Transfer Unit Controller
Wafer Transfer: 4-wafer forks and 1-wafer fork with pitch changer
Main Controllers:
Model TS-4000Z
Temperature Controller (Model 121)
MKS Type 152 Pressure Controller
Ulvac GP-2A Vacuum Gauge controller
Touch screen operator interface
Alpha Type Wafer Load Automation
Alpha Type Cassette Load Automation
16 Carrier Stocker
Rapid Cooling System
Wide Body style, Right sided
208VAC 3, Phase
9.TEL Alpha 808SC vertical low pressure furnaces.
(3) Configured for SiN process. 1996-1997 vintage.
(11) Configured for TEOS process. 1996-1998 vintage.
(7) Configured for POLY process,
10.TEL Alpha 855 diffusion furnace
8"
Gate Oxide
5 zones
N2 Load Lock
Mid Tempurature Heater element
TS-4000 Controller - SW Version 7.03
Floppy Drive Unit
Voltage: 480V, Amp: 60, Freq (Hz):60, Phase: 3
Installed, operational in Wafer Fab, good condition.
Make Model Gas Flow:
Tylan 2901 N2 20 slm
Tylan 2901 O2 10 slm
Tylan 2901 O2 1 slm
Tylan 2901 H2 7.5 slm
Tylan 2901 Ar 20 slm
Tylan 2901 HCL 50 sccm
Tylan 2901 HCL 500 sccm
Tylan 2901 N20 20 slm
Tylan 2901 N2 1 slm
11.TEL Alpha 8S Diffusion furnaces, 8"
AP-FTP oxidation current configuration (Tunnel Ox)
“Thin” oxide
Atmospheric torch
50 production wafers load size
Boat rotation
WAVES system controller w back remote
480 Volts power requirement
HEC Pyro Control
Model 560 temperature controller
H2 detection and digital gas monitor
Gas System
House N2 2x
UHP N2 (cylinder) 1x
Argon
O2
H2
HCl
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Allwin21 Corp can provide the following refurbished Etcher equipment.
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