AllWin21 Corp.

The LFE PDS/PDE 301 is a barrel plasma etcher that uses oxygen to etch organic films and residues such as photoresist in a process commonly referred to as "de-scumming." During a normal run for the LFE PDS/PDE 301 Barrel Etcher, the chamber is evacuated to under 0.5 torr pressure. A regulated flow of oxygen gas is introduced into the chamber and RF energy is applied to the chamber coils, which creates an oxygen plasma which does the etching. The oxygen ions in the plasma react with organics, such as photoresist, oxidizing or descumming the compounds off of the surface. The oxidized organics are pumped out of the LFE PDS/PDE 301 Barrel Etcher's chamber as exhaust gas.

LFE PDS/PDE 301 Features:
POWER RATING : 600 watts continuous input
QUARTZ REACTOR:1ea 8" dia. x 8" long,6”X7” quartz plate.
OPERATING PRESSURE RANGE:0.1 - 10 torr
VACUUM SEALS : Silicone O rings and bell jar gasket
REACTOR WINDOW: Hinged and spring loaded, with latch for open position
IMPEDANCE CONTROL: Matches from 10-600 watts to present input impedance of 50 ohms at RF power input connector. Automatic impedance matching once preset.

Allwin21 Corp. can also provide AW Control Software ,New controller and ENI RF Generator to upgrade the refurbished LFE PDS/PDE 301 tools which provides the following significant advantages.

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

LFE PDS/PDE 301/PDE 504