The results of experiments performed to evaluate the use of a commercially available rapid thermal annealer (RTA) with a graphite susceptor for capless rapid thermal annealing to activate implants in GaAs are reported in many articles. The interior of the susceptor was easily charged with As by annealing a sacrificial GaAs wafer. Wafers annealed face up in the charged susceptor showed no evidence of surface degradation (due to preferential loss of As) and no decrease in implant activation (peak doping) when compared to dielectric (SiO2) capped anneals. Over 50 wafers have been annealed without recharging the susceptor. In addition, slip on 3-in wafers was almost completely eliminated due to the reduction of radial temperature gradients. It is concluded that RTA in a commercially available graphite susceptor appears to be a viable annealing technique for activating implants in GaAs and related III-V materials and is suitable for a production environment.
Rapid thermal annealing of GaAs within an enclosed, SiC-coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900 °C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. The peak carrier concentration obtained in Si-implanted (3×1012 cm−2, 60 keV) GaAs by both methods is comparable.
We can supply the following sucseptor with SiC coating
* 3 inch
* 4" inch
* 6" inch
The pure SiC susceptor is also available to supply if necessary. |
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