AllWin21 Corp.

AccuThermo AW 810M is a desktop rapid thermal processor for 5 to 8 inch wafer , which uses high-intensity, visible radiation to heat single wafer for short periods at precisely controlled temperatures. These capabilities, combined with the heating chamber's cold-wall design, superior heating uniformity advanced temperature control technology and AW 900 new software, provide significant advantages over conventional furnace processing and conventional RTP systems.

AccuThermo AW 810M’s key features include:

Wafer Size:5 to 8 inch
Advanced ERP Pyrometer for precise high temperature measurement(See Detail ERP Pyrometer).
Add timer watch for the oven safety issue (the original has no safety interlock for the computer locks up, chamber would be burned if the computer locks up when process running).
The new software with power summary function to detect either lamp failure or sensor failure
Manual Operation
Use Sumpower as a parameter to control the uniformity of the wafer.
Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
Precise time-temperature profiles tailored to suit specific process requirements.
High-intensity visible radiation heats wafers for short periods. Fast heating and cooling rates unobtainable in conventional technologies.
Consistent wafer-to-wafer process cycle repeatability.
Elimination of external contamination.
Small footprint and energy efficiency.
Software calibration and easy to be done.
More functions and I/O hardware “exposed” for easier maintenance and trouble shooting.
It is easy to edit recipe with GUI and graph display.
Save all process data on the computer hard disk.
A/D and D/A precision is 14 to 16 bits.
Detect in process and with color curve displayed on the screen.
Lamp damage detect in process.
Sensor status detect function.
On line help function

AccuThermo AW 810M RTA RTP is a versatile tool, which is useful for many applications:
• Ion Implant Activation
• Polysilicon Annealing
• Oxide Reflow
• Silicide Formation
• Contact Alloying
• Oxidation and Nitridation
• GaAs Processing

Typical Application Area v

v Chip Maufacture
Compound Industry：GaAs, GaN, GaP, GaInP,InP and SiC
v Optronics：Planar optical waveguides,LASERs, LEDs and VCSELs
v Biomedical
v MEMS
v Nanotechnology
Solar Cell

For a bibliography and reprints of technical journal articles regarding these AccuThermo applications, contact the Allwin21 Corp. Marketing Communications Department.

AccuThermo AW 810M RTA RTP performance specification:

Recommended Steady-State Temperature Range: 100-1250° C.
Steady-State Temperature Stability: ± 1° C.
Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP),used for process temperatures from 600°C to 1250°C or a thermocouple, used for process temperatures below 800° C.
Heating Rate: 1-200° C per second, user-controllable, 10°C to 120°C for wafer, Programmable.
Cooling Rate: Temperature dependent; max 150° C per second.
Maximum Non-uniformity:

Radiant Flux: ±0.25%
Sheet resistivity(Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control):
<2% (Dose Monitoring Units)
<1.35% (R&D Units)
Implant: As 1E16 50 KeV with implant uniformity 0.3%

Steady state process time 0 to 30000 sec programmable
Wafer Sizes for the AccuTherm AW 810M: 4", 5" ,6"and 8"
Process Gases: The AccuTherm AW 810M system delivers one non-corrosive process gas with one MFC. Up to four MFC is optional.

AccuThermo AW 810M specifications above may change as different models are introduced or as design enhancements are implemented.

Rapid thermal processing

Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).

AG Associates Heatpulse is one of the most famous RTP equipment manufacturers. Many Integrated Chip companies, R&D centers, Institutes all over the world have been using AG Heatpulse Systems.

Allwin21 Corp can provide the following refurbished RTP equipment

Rapid Thermal Processing in Solar Cell

Rapid Thermal Processing in Light-Emitting Diode