Manufacturer:Branson
Refurbished by:Allwin21 Corp
Branson/IPC L3200 single wafer downstream stripper
Reactor Center
* Dual quartz chambers for 100-150mm wafers( or 150-200mm wafers), cassette to casette operation
* Automatic pneumatic soft-lift assemblies for each chamber
* In-line gas filters (0.05 micron)
* Two PM 732 automatch networks
* Quartz halogen lamp for preheating
* Process capabilities: positive and negative resist, hardened resist, polyimide
Process control and instrumentation
* Microprocessor controller, menu driven
* 20 recipes maximum
* Programmable Process Parameters: Gas Flow, Chamber Pressure, RF Power, Strip time, Heat Lamp On time, overstrip time
* Programmable Tolerance Limits: RF Power (forward and reflected), Time, Pressure, Gas flow, Pumpdown
* Automatic pressure control
* CRT system status display
* Programmable tolerance limit alarm
* Sixty four key, alphanumeric keypad for entry of process and system parameters
* seventy two hour battery backed RAM for program memory
Gas Handling Module and Control Features
* Two process gas lines and one purge line to include: One O2 @ 4000 SCCM mass flow controller, Optional gas (blank), fast and slow N2 purge
* All Stainless steel valves and gas lines
* Automatic variable throttle valve for pressure control
* Separate capacitance manometers for each chamber with isolation valve
Wafer Handling and Sensing
* Automatic pick-and-place wafer handling
* Two elevator cassette stands for send-to-receive operation
DC Power Module
* Distributes AC/DC power to system
System Power Control Panel
* AC ON/OFF for system power, RF generator, and vacuum pumps
Power Cabinet Assembly
* 510 Power Distribution Module
* Wafer Heating Module
* Separate control for system power, RF generator, and vacuum pumps control signal
* Shielded high-voltage components
* Emergency OFF switches
* Cover safety interlocks
* 12-VAC control to complete system
* ENI Mod.-12A RF Generator, 13.56MHz, crystal controlled, 0-1000 watts, continuously rated, Solid state, water-cooled
Safety and Security Features
* All covers interlocked
* Emergency OFF switches
* Electronic and software interlocks for RF power, wafer heating and gas flow
Facility Requirements
* Compressed air: 60 to 120 psig (clean and dry)
* System Electrical power: 200 to 240VAC, 40 amp, 1 phase, 50/60 Hz
* Wafer Heating power: 200 to 240VAC, 15 amp, 1 phase, 50/60 Hz
* Cooling water: 1.2 gal/min (house water, filtered) for RF generator
* House vacuum: at leastg .8CFM @ 20 inches Hg
* Mainframe air exhaust: 4 inch duct flange, 100 CFM
Pentium PC computer equipped either DOS Windows
Interface control board with parallel connectors between PC computer and the L3200 system
New 16 bits A/D measurement system to replace original 12 bits A/D system to improve the accuracy of the measurements of gas flow, vacuum pressure, EOP, temperature of the wafer, etc. to improve the repeatability of the Asher process.
New 14 bits D/A system to replace original old 8 bits D/A to improve the accuracy of the set point of the vacuum pressure, gas flow, etc.
Add new RTP system to get more accuracy temperature control to improve the repeatability of the process. The new RTP system includes(1)New lamp control system with new special solid-state relay control system. It is similar to the oven control system of the RTP machine;(2)New zero crossing detects system. It is similar to the zero crossing detect of the RTP machine.(3)K-type thermocouple system with vacuum feed-through and amplifier to measure the temperature of the wafer. The thermocouple is touching the backside of the wafer directly. The feed-through is put on the front door, which is good when the wafer heated at 450 degree C.(4)Replace the center lamp of the system to be the same high power as the side one to speed up the heat speed and improve the uniformity of the asher and descum process.
User-friendly recipe editor with gas flow set point, vacuum pressure set point, RF on or off set up, temperature setup etc.
New GUI interface with curves display of the temperature, vacuum pressure, gas flow, RF status, EOP signal etc. during the process.
Saved all process data on the local hard disk and send data to the server if it is needed (option).
Saved all operation function, date, time and error message on the lot file.
Wafer ID reading function to read wafer ID and use the wafer ID for the data ID to save the process data. Data saved with 4 layers: (1) directory (say year 2003,2004), (2) lot ID, (3) Date Time or step ID, (4) wafer ID. So it is easy to trace the data.
Manual and auto process running
System diagnostics for the quick diagnostic of the system
Easier I/O set and checks function for the Maintenance
RTP function with temperature control ±1~2°C accuracy from 50 to 500°C with K-type thermocouple.
Higher through put.
Advanced accurate temperature control to make much better repeatability
Better uniformity
All process data saved and easier for failure analyzer and process debug
“Exposed” I/O, A/D, D/A is easier for troubleshooting and maintenance.
Tools would be painted and cleaned up
Chamber would be re-anodized
In semiconductor manufacturing plasma asher/stripper is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ashing which is removed with a vacuum pump.
Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas (O2) to ionizing radiation. At the same time, many free radicals are formed which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.
Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. Effectively, this means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active specie is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.
Allwin21 Corp can provide the following refurbished plasma asher/descum equipment.
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