Manufacturer:Gasonics
Refurbished by:Allwin21 Corp
Gasonics is a Registered Trademark of Novellus Corp. Gasonics Aura 2000LL is a 8" Cassette to Cassette ,Single Wafer Downstream Microwave Asher w/ Loadlock with microwave source and a dictated reactor chamber ,8" Cassette to Cassette ,Single Wafer Asher ,Configured for 4" - 8" wafers,Loadlock with cool-down station for processed wafer Gas box, designed to hold 4 MFC's capability (System includes 2 MFC's calibrated to customer gas specifications Downstream endpoint detection Rear access with control panel for servicing .No RF damage (0.1 VOLT CV SHIFT) Front and backside etching .Variable platen temperature Alumina (ceramic) Plasma Tube Fluorine compatible chamber Multiple step process capability.
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Allwin21 Corp. can also provide advanced Equip Robot transfer wafer technology , AW Control Software and Superior Temperature Control Technology to upgrade the refurbished Gasonics Aura 2000LL which provides the following significant advantages.
- Pentium PC computer equipped with DOS Windows.
- Interface control board with parallel connectors between PC computer and the Aura-3000 system
- New 16 bits A/D measurement system to replace original 12 bits A/D system to improve the accuracy of the measurements of gas flow, vacuum pressure, EOP, temperature of the wafer, etc. to improve the repeatability of the Asher process.
- New 14 bits D/A system to replace original old 8 bits D/A to improve the accuracy of the set point of the vacuum pressure, gas flow, etc.
- Add new RTP system to get more accuracy temperature control to improve the repeatability of the process. The new RTP system includes:(1)New lamp control system with new special solid-state relay control system. It is similar to the oven control system of the RTP machine(2)New zero crossing detects system. It is similar to the zero crossing detect of the RTP machine.(3)K-type thermocouple system with vacuum feed-through and amplifier to measure the temperature of the wafer. The thermocouple is touching the backside of the wafer directly.
- User-friendly recipe editor with gas flow set point, vacuum pressure set point, RF on or off set up, temperature setup etc.
- New GUI interface with curves display of the temperature, vacuum pressure, gas flow, RF status, EOP signal etc. during the process.
- Saved all process data on the local hard disk and send data to the server if it is needed (option).
- Saved all operation function, date, time and error message on the lot file.
- Wafer ID reading function to read wafer ID and use the wafer ID for the data ID to save the process data. Data saved with 4 layers: (1) directory (say year 2003,2004), (2) lot ID, (3) Date Time or step ID, (4) wafer ID. So it is easy to trace the data.
- Option for Bar code function for the lot ID, recipe ID selection.
- Manual and auto process running.
- System diagnostics for the quick diagnostic of the system
- Easier I/O set and checks function for the Maintenance.
- RTP function with temperature control ±2°C accuracy from 50 to 500°C with K-type thermocouple.
- Higher through put.
- Advanced accurate temperature control to make much better repeatability.
- All process data saved and easier for failure analyzer and process debug.
- “Exposed” I/O, A/D, D/A is easier for troubleshooting and maintenance.
- Tools would be painted and cleaned up
- Chamber would be re-anodized
In semiconductor manufacturing plasma asher/stripper is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ashing which is removed with a vacuum pump.
Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas (O2) to ionizing radiation. At the same time, many free radicals are formed which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.
Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. Effectively, this means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active specie is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.
Allwin21 Corp can provide the following refurbished plasma asher/descum equipment.
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