Manufacturer:Branson
Refurbished by:Allwin21 Corp
The Branson IPC 3000 is a barrel plasma etcher that uses oxygen to etch organic films and residues such as photoresist in a process commonly referred to as "de-scumming." During a normal run for the Branson Barrel Etcher, the chamber is evacuated to under 0.5 torr pressure. A regulated flow of oxygen gas is introduced into the chamber and RF energy is applied to the chamber coils, which creates an oxygen plasma which does the etching. The oxygen ions in the plasma react with organics, such as photoresist, oxidizing or descumming the compounds off of the surface. The oxidized organics are pumped out of the Branson Barrel Etcher's chamber as exhaust gas.
Branson IPC 3000 Features:
POWER RATING : 1000 watts continuous input
REACTOR:1ea 10" dia. x 20" long
OPERATING PRESSURE RANGE:0.1 - 10 torr
VACUUM SEALS : Silicone O rings and bell jar gasket
REACTOR WINDOW: Hinged and spring loaded, with latch for open position
PRESSURE TRANSDUCER: Thermocouple type
IMPEDANCE CONTROL: Matches from 10-1000 watts to present input impedance of 50 ohms at RF power input connector. Automatic impedance matching once preset.
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Allwin21 Corp. can also provide AW Control Software and Superior Temperature Control Technology to upgrade the refurbished Branson tools which provides the following significant advantages.
 
* Auto processing with RF, gas flow and timer set up
* 1 process gas with MFC
* Upgrade with new software and controller
* Touch screen
* 4 gases by MFC(Option，50 sccm up to 30000 sccm，control up to 6 valves include main vacuum valve and vent or purge valve..)
* Baratron to read the pressure(Option)
* Throttle valve to control the pressure to keep the process repeatable(Option)
* ENI RF generator either ACG series(Option) without water cooling or EOM-6, OEM-12b(Option) series with cooling water
In semiconductor manufacturing plasma asher/stripper is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ashing which is removed with a vacuum pump.
Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas (O2) to ionizing radiation. At the same time, many free radicals are formed which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.
Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. Effectively, this means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active specie is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.
Allwin21 Corp can provide the following refurbished plasma asher/descum equipment.
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